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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101S THRU EDB106S GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Surge overloading rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram DB-S .310 (7.9) .290 (7.4) .255 (6.5) .245 (6.2) MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .042 (1.1) .038 (1.0) .013 (.330) .003 (.076) .410 (10.4) .360 (9.4) .009 (9.4) .060 (1.524) .040 (1.016) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. o .335 (8.51) .320 (8.13) .135 (3.4) .115 (2.9) .205 (5.2) .195 (5.0) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 oC Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 15 -65 to + 150 EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S 50 35 50 100 70 100 150 105 150 1.0 30 10 200 140 200 300 210 300 400 280 400 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @TA = 25 oC @TA =150 o C SYMBOL VF IR trr EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S 1.0 1.25 5.0 uAmps 50 50 nSec 2001-4 UNITS Volts RATING AND CHARACTERISTIC CURVES ( EDB101S THRU EDB106S ) AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load trr +0.5A (-) PULSE GENERATOR (NOTE 2) (+) 25 Vdc (approx) (-) D.U.T 0 -0.25A 1.0 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 0 25 50 75 100 125 150175 1cm SET TIME BASE FOR 10 ns/cm AMBIENT TEMPERATURE ( ) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) 100 10 TJ = 150 10 TJ = 100 1.0 4S B10 B1 ED B1 05 S~ ED 06 S ED B10 1S~ 1.0 .1 ED TJ = 25 .1 TJ = 25 .01 Pulse Width = 300uS 1% Duty Cycle .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT JUNCTION CAPACITANCE, (pF) PEAK FORWARD SURGE CURRENT, (A) .001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100 TJ = 25 35 30 25 20 15 10 5 0 8.3ms Single Half Sine-Wave (JEDED Method) RECTRON |
Price & Availability of EDB105S
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